10 October 2003 Development of a visible-NIR/LWIR QWIP sensor
Author Affiliations +
Proceedings Volume 5074, Infrared Technology and Applications XXIX; (2003); doi: 10.1117/12.497512
Event: AeroSense 2003, 2003, Orlando, Florida, United States
Quantum Well Infrared Photodetectors (QWIPs) based infrared focal plane arrays (FPAs) have been widely researched and investigated in the 3-5 μm and 6-20 μm wavelength ranges. The demonstrations of QWIP FPAs include single-color, dual-color and even multiple-color, as well as varieties of physical formats in the infrared range. In this paper, we discuss the research and development efforts currently undergoing at QWIP Technologies on dual-color, visible-NIR/LWIR FPAs, as an interim step for a project sponsored by DARPA (Defense Advanced Research Project Agency) to develop a four-color QWIP-based FPA. To the best of our knowledge, this is the first reported result on visible/LWIR QWIP imager, as well as the first reported GaAs PIN diode-based FPA. This device consists of a GaAs/AlGaAs based PIN diode grown on a GaAs substrate, and subsequently a stack of multiple quantum wells (MQWs), epitaxially grown on top of the PIN structure. This VISA (visible/infrared sensor array) structure is sensitive in the 500nm-890nm as well as in the 8um-12 um wavelength ranges. Very high sensitivities are observed from both visible PIN diode and LWIR QWIP; both visible and LWIR images obtained from this device are presented in this paper.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Cho, Barbara K. McQuiston, Wah Lim, Sir B. Rafol, Cynthia Hanson, Richard Nguyen, Andy Hutchinson, "Development of a visible-NIR/LWIR QWIP sensor", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.497512; https://doi.org/10.1117/12.497512


Back to Top