10 October 2003 Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates
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Proceedings Volume 5074, Infrared Technology and Applications XXIX; (2003); doi: 10.1117/12.511996
Event: AeroSense 2003, 2003, Orlando, Florida, United States
Abstract
Pb(Zr,Ti)O3 (PZT), a promising material for uncooled infrared detection, is an anisotropic perovskite with the best pyroelectric effect observed along the c-axis. Although c-axis orientated PZT films can be easily obtained on single crystal substrates with minimal lattice mismatch, it remains a challenge in practical cases when they must be grown on non-textured polymer based sacrificial coatings over Si substrates. To address this issue, we have been focused on development of thin textured MgO templates on non-textured substrates, such as amorphous SiO2/Si and polymer coated SiO2/Si, using an ion-beam-assisted deposition (IBAD) technique. C-axis-oriented multi-layered LaNiO3/Pb(Zr,Ti)O3/LaNiO3 have been achieved and the ferroelectric properties, that impact the figure of merit for IR sensors, have been characterized.
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Ronald N. Vallejo, Sang-Ho Yun, Judy Z. Wu, Meimei Z. Tidrow, H. Braaten, C. Hansen, P. Adrent, "Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.511996; https://doi.org/10.1117/12.511996
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KEYWORDS
Ferroelectric materials

Silicon

Ion beams

Infrared detectors

Polymers

Infrared sensors

Electrodes

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