10 October 2003 HgCdTe HDVIP detectors and FPAs for strategic applications
Author Affiliations +
Abstract
Detector characteristics of Cu- and Au-doped High Density Vertically Integrated Photodiode (HDVIP) detectors as well as Cu-doped HDVIP Focal Plane Arrays (FPAs) are presented in this paper. Individual photodiodes in test bars were examined by measuring I-V curves and the associated resistance-area (RA) product as a function of temperature. The Au-doped MWIR [λc(78 K) = 5 μm] HDVIP detectors RoA performance was within a factor of two or three of theoretical. Noise as a function of frequency has been measured on Au-doped MWIR HgCdTe HDVIP diodes at several temperatures under dark and illuminated conditions. Low-frequency noise performance of the Au-doped MWIR diode in the various environments is characterized by the ratio α of the noise current spectral density at 1 Hz to the value of the diode current. For photocurrent at 140 K, αPHOTO = 1.8 x 10-5. The value of αPHOTO is the same at both zero bias and 100 mV reverse bias. At 160 K, αPHOTO is slightly lower but still in the low 10-5 range. Excess low-frequency noise measured at 140 K and 100 mV reverse bias in the dark has αDARK = 1.4 x 10-5. At 160 K and 100 mV reverse bias, αDARK is in the mid 10-5 range. At 140 K,the dark current at 8.2 V reverse bias was equal to the photocurrent at 100 mV reverse bias and close to the photocurrent at zero bias. αDARK = 1.85 x 10-3 at -8.2 V. This ratio is two orders of magnitude greater than αPHOTO. At 8.2 V reverse bias, the current was amplified by avalanche processes. Similar results were obtained on the Au-doped diode at 160 K. Diffusion current dominates dark current at 100 mV reverse bias at T = 185 K and T = 220 K. The ratio, αDARK approximately αPHOTO in the low to mid 10-5 range, i.e. dark diffusion current generates excess low frequency noise in the same manner as photocurrent. In addition, 256 x 256 Cu-doped detector arrays were fabricated. Initial measurements had seven out of ten FPAs having operabilities greater than 99.45% with the best 256 x 256 array having only two inoperable pixels.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arvind I. D'Souza, Arvind I. D'Souza, Maryn G. Stapelbroek, Maryn G. Stapelbroek, E. R. Bryan, E. R. Bryan, Alexander L. Vinson, Alexander L. Vinson, Jeffrey D. Beck, Jeffrey D. Beck, Michael A. Kinch, Michael A. Kinch, Chang-Feng Wan, Chang-Feng Wan, James E. Robinson, James E. Robinson, } "HgCdTe HDVIP detectors and FPAs for strategic applications", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.487313; https://doi.org/10.1117/12.487313
PROCEEDINGS
11 PAGES


SHARE
Back to Top