10 October 2003 Megapixel HgCdTe MWIR focal plane array with a 15-μm pitch
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Abstract
In this paper we present the first demonstration at LETI infrared laboratory of a megapixel HgCdTe MWIR focal plane array with a 15μm pitch. The detectors were interconnected by indium bumps to the CMOS readout circuit. The design of these interconnections has been adapted from the standard CEA-LETI process to achieve resolution and uniformity required by the reduced pitch. Because of the mismatch of thermal dilatation coefficients between the substrate and the HgCdTe, specific developments were necessary in order to achieve the hybridization process with an extremely reduced amount of defaults. The readout circuit was designed in a 3.3V/0.35μm CMOS technology. Its main features were to allow the validation of the hybridization and technological processes. A Megapixel IRCMOS has been fully characterized at 77K exhibiting excellent electro-optical performances and an operability greater than 99.8%.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Castelein, Pierre Castelein, Francois Marion, Francois Marion, Jean-Luc Martin, Jean-Luc Martin, Jacques P. Baylet, Jacques P. Baylet, Norbert Moussy, Norbert Moussy, Olivier Gravrand, Olivier Gravrand, Alain Durand, Alain Durand, Jean-Paul Chamonal, Jean-Paul Chamonal, Gerard L. Destefanis, Gerard L. Destefanis, } "Megapixel HgCdTe MWIR focal plane array with a 15-μm pitch", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.486880; https://doi.org/10.1117/12.486880
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