Polycrystalline PbSe x-y addressed uncooled FPAs

M. Carmen Torquemada; Victor Villamayor; M. T. Rodrigo; German Vergara; Fernando J. Sanchez; Rosa Almazan; Marina Verdu; Purificacion Rodriguez; Luis J. Gomez; Teresa Maria Montojo

doi:10.1117/12.485845

10 October 2003 Polycrystalline PbSe x-y addressed uncooled FPAs

M. Carmen Torquemada, Victor Villamayor, M. T. Rodrigo, German Vergara, Fernando J. Sanchez, Rosa Almazan, Marina Verdu, Purificacion Rodriguez, Luis J. Gomez, Teresa Maria Montojo

Author Affiliations +

Proceedings Volume 5074, Infrared Technology and Applications XXIX; (2003) https://doi.org/10.1117/12.485845
Event: AeroSense 2003, 2003, Orlando, Florida, United States

Abstract

A technology for processing low density uncooled focal plane arrays (FPAs) of polycrystalline PbSe has been developed. PbSe is deposited, processed and sensitized on a silicon substrate with two levels of metal separated by a thin dielectric layer of SiO₂. An x-y addressed type read out permits a reduced number of leads and high filling factors. Unlike standard polycrystalline PbSe processing method we deposit PbSe by sublimation in vacuum. As-deposited, PbSe is not sensitive to IR light. In order to turn it photosensitive it is necessary to expose the films to specific thermal treatments. We have developed a very efficient sensitization process during which substrates withstand temperatures as high as 450°C. As a technology demonstrator, a low density (8x8 elements) PbSe FPA has been processed. Room temperature detectivities typically yield values of Dλ* (500 K, 300 Hz, 1.2 Hz) approximately 3 x 10⁹ cm Hz^1/2/W. The technological capabilities developed can be easily extended to more dense arrays.

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M. Carmen Torquemada, Victor Villamayor, M. T. Rodrigo, German Vergara, Fernando J. Sanchez, Rosa Almazan, Marina Verdu, Purificacion Rodriguez, Luis J. Gomez, and Teresa Maria Montojo "Polycrystalline PbSe x-y addressed uncooled FPAs", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); https://doi.org/10.1117/12.485845

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