10 October 2003 Polycrystalline PbSe x-y addressed uncooled FPAs
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A technology for processing low density uncooled focal plane arrays (FPAs) of polycrystalline PbSe has been developed. PbSe is deposited, processed and sensitized on a silicon substrate with two levels of metal separated by a thin dielectric layer of SiO2. An x-y addressed type read out permits a reduced number of leads and high filling factors. Unlike standard polycrystalline PbSe processing method we deposit PbSe by sublimation in vacuum. As-deposited, PbSe is not sensitive to IR light. In order to turn it photosensitive it is necessary to expose the films to specific thermal treatments. We have developed a very efficient sensitization process during which substrates withstand temperatures as high as 450°C. As a technology demonstrator, a low density (8x8 elements) PbSe FPA has been processed. Room temperature detectivities typically yield values of Dλ* (500 K, 300 Hz, 1.2 Hz) approximately 3 x 109 cm Hz1/2/W. The technological capabilities developed can be easily extended to more dense arrays.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Carmen Torquemada, Victor Villamayor, M. T. Rodrigo, German Vergara, Fernando J. Sanchez, Rosa Almazan, Marina Verdu, Purificacion Rodriguez, Luis J. Gomez, Teresa Maria Montojo, "Polycrystalline PbSe x-y addressed uncooled FPAs", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.485845; https://doi.org/10.1117/12.485845


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