A dynamic infrared scene projector based on IR luminescent devices has many potential advantages compared with existing systems based on micro-resistor arrays. These include very fast response times, as individual devices can be driven at frequencies greater than 1 MHz, and no need for cryogenic cooling. Additionally, luminescent sources can not only appear hot to an IR observer when in forward bias, but also appear cold in reverse bias (commonly referred to as negative luminescence), so that a large apparent temperature range around ambient can be simulated. For a scene projector a large array of photodiodes is required, where each photodiode can be biased individually. As a precursor to the manufacture of a scene projector, we have already fabricated large area MW devices, consisting of arrays of photodiodes, suitable for use as calibration sources in IR cameras. To reduce the currents needed to achieve maximum dynamic temperature range, we have used a novel micromachining technique to fabricate integrated optical concentrators in InSb/InAlSb devices. We present here recent results from a large area (~0.86cm2) medium wavelength (MW) device, consisting of an array of photodiodes each with an integrated optical concentrator. The reverse saturation current of the device was measured to be ~2.3A/cm2, which is significantly smaller than the value of ~9A/cm2 reported previously for similar devices without optical concentrators. The device also displays a large apparent temperature range in line with device modelling. Finally, we will discuss the perspectives on using similar devices for dynamic infrared scene projection.