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1 April 2003 Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications
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Abstract
This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Yaw Chung, Chung-Huang Yang, Kang-Chu Peng, and M. H. Yeh "Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications", Proc. SPIE 5102, Independent Component Analyses, Wavelets, and Neural Networks, (1 April 2003); https://doi.org/10.1117/12.508516
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