9 May 2003 Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon
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Proceedings Volume 5112, Noise as a Tool for Studying Materials; (2003) https://doi.org/10.1117/12.503729
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and found a very good agreement between the resulting theoretical spectra and the spectra obtained in our own experiments. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects. For a given defect, the rate of charge fluctuations depends on the activation barrier, which an electron should overcome in order to escape from that defect. This rate, in turn, depends on the local random potential. Therefore, our study also introduces a new experimental method of characterizing the random potential landscapes in the vicinity of deep defects.
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Boris V. Fine, Boris V. Fine, Jeroen P. R. Bakker, Jeroen P. R. Bakker, Jaap I. Dijkhuis, Jaap I. Dijkhuis, } "Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon", Proc. SPIE 5112, Noise as a Tool for Studying Materials, (9 May 2003); doi: 10.1117/12.503729; https://doi.org/10.1117/12.503729
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