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Effect of the interface recombination current fluctuations on 1/f noise of gated lateral bipolar transistors
Phase noise metrology and modeling of microwave transistor applications to the design of state-of-the-art dielectric resonator oscillators
Fast and ultrafast dissipation and fluctuations in two-dimensional channels for nitride and arsenide FETs
Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region
Determination of the influence of device structure and alloy material on the noise behavior of hetero-FETs
Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025