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12 May 2003 Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.488947
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The characteristic potential method(CPM), which has been successfully applied to calculate 1/f noise and thermal noise of multi-terminal homogeneous semiconductor resistors, is extended to calculate 1/f noise in inhomogeneous devices such as MOSFETs. The drain 1/f noise current of MOSFETs in the linear region is calculated using the CPM together with the well-known existing 1/f noise sources based on either Hooge's empirical model or McWhorter's model, and the calculated results are compared with the experimental results. It is shown that the difference of the 1/f noise behaviour between n-MOSFETs and p-MOSFETs in the linear region can be attributed to either the difference in their effective field dependence between the local electron mobility and the local hole mobility near the Si-SiO2 interface in the inversion layer or the difference in degree of Nt(oxide trap density)dependence between the effective electron mobility and the effective hole mobility.
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Sung-min Hong, Yong-Seok Kim, Hong Shick Min, and Young June Park "Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.488947
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