12 May 2003 Computer simulation and reverse engineering of trap-assisted generation-recombination noise in advanced silicon MOSFETs
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497127
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
Trap assisted generation-recombination noise spectra of advanced n-channel MOSFETs are numerically simulated using the drift-diffusion transport model and focusing on the bimolecular electron transitions between the channel and gate oxide. Good agreement between measured and simulated data is observed in both the linear and saturated regime of operation under sub-threshold and inversion conditions. Reverse engineering of the measured noise data reveals the discrete trap distributions in the oxide responsible for the observed spectra.
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Gijs Bosman, Fan-Chi Hou, Derek O. Martin, Juan E Sanchez, "Computer simulation and reverse engineering of trap-assisted generation-recombination noise in advanced silicon MOSFETs", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497127; https://doi.org/10.1117/12.497127
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