Paper
12 May 2003 Determination of the influence of device structure and alloy material on the noise behavior of hetero-FETs
Author Affiliations +
Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497035
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The noise performance of sub-quarter micrometer gate length FETs is determined by using physical simulators. The hydrodynamic transport model equations are linearized and efficiently solved in two dimensions to determine the small-signal parameters and the minimum noise figure up to frequencies near the device cut-off frequency. For higher frequencies, the noise performance is obtained by using a 2D Monte Carlo code which fully takes into account the non-stationary transport properties and quantization effects. The relation between the terminal noise currents and the internally generated noise at the different device regions are determined. Different device stuctures are simulated and the obtained results are compared with experimental data.
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Ali Abou-Elnour and Ossama Abo-Elnor "Determination of the influence of device structure and alloy material on the noise behavior of hetero-FETs", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.497035
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KEYWORDS
Aluminum

Field effect transistors

Solids

Instrument modeling

Monte Carlo methods

Scattering

Quantization

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