12 May 2003 Differences in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.503166
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise of quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
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Lode J.K. Vandamme, Lode J.K. Vandamme, Alexander V. Belyakov, Alexander V. Belyakov, Mikhail Yu. Perov, Mikhail Yu. Perov, Arkady V. Yakimov, Arkady V. Yakimov, } "Differences in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.503166; https://doi.org/10.1117/12.503166
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