12 May 2003 Differences in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.503166
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise of quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lode J.K. Vandamme, Lode J.K. Vandamme, Alexander V. Belyakov, Alexander V. Belyakov, Mikhail Yu. Perov, Mikhail Yu. Perov, Arkady V. Yakimov, Arkady V. Yakimov, } "Differences in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.503166; https://doi.org/10.1117/12.503166

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