Effect of the interface recombination current fluctuations on 1/f noise of gated lateral bipolar transistors

Gregory G. Romas Jr.; Md Mazhar Ul Hoque; Zeynep Celik-Butler

doi:10.1117/12.496893

12 May 2003 Effect of the interface recombination current fluctuations on 1/f noise of gated lateral bipolar transistors

Gregory G. Romas Jr., Md Mazhar Ul Hoque, Zeynep Celik-Butler

Author Affiliations +

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.496893
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

A gated lateral bipolar transistor is a bulk lateral BJT in parallel with a MOSFET at the surface. The base current components such as surface recombination and space charge recombination currents are two of the dominant noise sources in the lateral BJT. If the gate is biased such that the MOSFET is in the off-state by accumulating carriers underneath the oxide in the base surface, the noise contribution by these two base current (Ib) components can be better understood. The carrier accumulation in the base surface can be modulated with different gate bias, which in turn will affect the fluctuation of the surface recombination current component. In this paper, noise power spectral density of gated lateral PNP transistors, fabricated in Texas Instruments Standard Bipolar Process, has been discussed. The base current noise power spectral density (SIb) was extracted from the cross-correlation noise spectrum measured between the base and the collector circuits for different gate biasing conditions. Based on the frequency exponent dependence of the noise power spectral density, it was found that the noise in the low frequency range is in the form of 1/f noise. S_Ib was found to be the dominant noise source for these devices as the coherence between the base and collector power spectral density was very close to 1. S_Ib was extracted for a base current range of 8 nA to 1microA for a gate bias range of 0V to 40V. The SPICE noise model parameters, AF and KF were also determined for each case from the dependence of S_Ib on I_b. The noise was measured on devices with different base width values.

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Gregory G. Romas Jr., Md Mazhar Ul Hoque, and Zeynep Celik-Butler "Effect of the interface recombination current fluctuations on 1/f noise of gated lateral bipolar transistors", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.496893

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Transistors

Measurement devices

Field effect transistors

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Oxides

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