12 May 2003 Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.488964
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
We investigate the impact of body biasing on the low frequency noise (LFN) performances of NMOS transistors from a transistors 130 nm CMOS technology. The body-to-source voltage VBS was varied from - 0.5 to + 0.5 V for reverse and forward mode substrate biasing. A detailed electrical characterization was performed and the benefits of the body bias analysed in terms of current and maximum transconductance variations. Noise measurements were first performed at low drain bias VDS = 25 mV and VBS = 0 V in order to discuss the noise model. Results are in agreement with the carrier number fluctuation theory. Bulk bias dependence of the LFN was investigated at VDS = VDD = 1.2 V. Significant noise reduction is observed in the subthreshold regime when applying a forward body bias. In strong inversion, the noise level is found to be approximately independent of the substrate bias VBS.
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Mathieu Marin, M. Jamal Deen, Mario de Murcia, Pierre Llinares, Jean Charles Vildeuil, "Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488964; https://doi.org/10.1117/12.488964
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