12 May 2003 Generation-recombination noise in GaN and GaN-based devices
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.488468
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Generation-recombination (GR) noise in GaN and AlGaN thin films, GaN based Metal Semiconductor Field Effect Transistors (MESFETs), Heterostructure Field Effect Transistors (HFETs) and Schottky diode photodetectors was investigated. AlGaN thin films, AlGaN/GaN HFETs and Schottky barrier Al0.4Ga0.6N diodes exhibited GR noise with activation energies of 0.8 - 1 eV. AlGaN/GaN HFETs also presented GR noise with activation energies of 1 - 3 meV and 0.24 eV at cryogenic temperatures. No such noise was observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). We conclude that the local levels responsible for the observed noise in HFETs and DHFETs could be located in AlGaN barrier layers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nezih Pala, Nezih Pala, Sergey L Rumyantsev, Sergey L Rumyantsev, Michael S. Shur, Michael S. Shur, Michael E. Levinshtein, Michael E. Levinshtein, M. Asif Khan, M. Asif Khan, Grigory S. Simin, Grigory S. Simin, Remis Gaska, Remis Gaska, } "Generation-recombination noise in GaN and GaN-based devices", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488468; https://doi.org/10.1117/12.488468

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