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12 May 2003 Low-frequency noise and fluctuations in advanced CMOS devices
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003)
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental data obtained on advanced CMOS generations. The application of low frequency noise measurements as a characterization tool for large area MOS devices is also discussed. The main physical characteristics of random telegraph signals (RTS) observed in small area MOS transistors are reviewed. The impact of scaling down on the low frequency noise and RTS fluctuations in CMOS silicon devices is also addressed. Experimental results obtained on 0.35-0.12 μm CMOS technologies are used to predict the trends for the noise in future CMOS technologies e.g. 0.1μm and beyond. The formulation of thermal noise underlying the low frequency 1/f or RTS fluctuations in MOSFETs is also recalled for completeness.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerard Ghibaudo "Low-frequency noise and fluctuations in advanced CMOS devices", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003);

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