12 May 2003 Low-frequency noise in porous Si LED
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.492905
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
The current-voltage characteristics and the low-frequency noise spectra of p-type Si - Porous Si - Al light emitting diodes were investigated. over 1 V forward biases a reasonable fit was obtained in the Fowler-Nordheim plot. At lower biases, however, an additional current-component appears, which shows a saturating character. This current component is ascribed to trap-assisted tunneling. Any attempts of accurately fitting the I-V characteristic by other known transport mechanisms failed, as reported earlier. The measured noise spectra show 1/f character. While the biasing current was varied from a about 30 microAmps up to several mAs, the noise level remained constant within the measuring error, i.e. the voltage noise is independent of the bias. This is contradictory to the results obtained on uniform resistors, where the noise power scales with I2, or V2. On this reason the observed noise is attributed to the saturating trap-assisted tunneling.
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Bela Szentpali, Bela Szentpali, Peter Gottwald, Peter Gottwald, Tibor Mohacsy, Tibor Mohacsy, Kund Molnar, Kund Molnar, Istvan Barsony, Istvan Barsony, "Low-frequency noise in porous Si LED", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.492905; https://doi.org/10.1117/12.492905

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