12 May 2003 Noise and charge transport in polymer thin film structures
Author Affiliations +
Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.485990
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
The low frequency noise (LFN) properties of the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET’s (PFET’s) channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ognian Marinov, Ognian Marinov, M. Jamal Deen, M. Jamal Deen, J. Yu, J. Yu, G. Vamvounis, G. Vamvounis, Steven Holdcroft, Steven Holdcroft, W. Woods, W. Woods, } "Noise and charge transport in polymer thin film structures", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.485990; https://doi.org/10.1117/12.485990

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