Paper
12 May 2003 Phase noise metrology and modeling of microwave transistor applications to the design of state-of-the-art dielectric resonator oscillators
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497467
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
Phase noise in microwave transistors is studied both theoretically and experimentally using residual phase noise measurements. The experimental approach allows the exploration of many interesting features of phase noise generation in these devices, such as the dependence of phase noise versus microwave power or transistor low frequency loading, meanwhile nonlinear simulation is still necessary to optimise the microwave load and the whole oscillator circuit. The different behaviours described are illustrated in various microwave circuits, and particularly dielectric resonator oscillators, with some of them featuring state of the art performance.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Olivier Llopis and Gilles Cibiel "Phase noise metrology and modeling of microwave transistor applications to the design of state-of-the-art dielectric resonator oscillators", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.497467
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KEYWORDS
Oscillators

Transistors

Microwave radiation

Resonators

Phase measurement

Amplifiers

Field effect transistors

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