12 May 2003 Physical model for low-frequency noise in avalanche breakdown of PN junctions
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Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497403
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
A physically-based transient microplasma based model for low frequency noise in pn diodes is discussed and implemented in SPICE simulator. The simulation indicates that the model correctly describes the non-monotonic behavior of both the DC and the noise characteristics of diode at the onset of avalanche breakdown. Since the model is based on a new microplasma switching theory, the results of simulation confirm the findings of this theory. These are, as follows for the microplasma. Its switching threshold is the condition of equality of free- to space charge concentration in depletion layer. Its on-current is approximately twice the threshold current. It is initialized by the charge generation due to few recombination centers in microplasma region at high avalanche multiplication due to impact ionization, while the microplasma turn-off is due to carrier diffusion from microplasma region into the depletion layer at low, but larger than 1, avalanche multiplication.
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Ognian Marinov, Ognian Marinov, M. Jamal Deen, M. Jamal Deen, } "Physical model for low-frequency noise in avalanche breakdown of PN junctions", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497403; https://doi.org/10.1117/12.497403
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