8 May 2003 Bispectrum of the 1/f noise in diodes on quantum dots and wells
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.499828
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The bispectrum of the 1/f noise is investigated in the present work. For the Gaussian noise it equals zero. LEDs on self-organized InAs/GaAs quantum dots and laser diodes on In0.2Ga0.8As/GaAs/InGaP quantum wells made in Russia were tested. The voltage noise was analyzed in a wide interval of currents through the diodes. Estimates of the probability density function and semi-invariants of the noise have not revealed any appreciable deviations from the Gauss law. Noise spectra Sv(f)in the range 1 Hz - 20 kHz were analyzed. In most cases the frequency exponent γs of the spectrum is close to one, the Hooge’s parameter αH has magnitude of the order 10-4. The bispectrum Bv(f1,f2of the noise is a complex function of frequencies f1 and f2. Its absolute value is decreasing while moving from the beginning of the frequency plane Of1f2. The decrease along the bisector (f1 = f2 = f) follows the power law characterized by the frequency exponent γB ≈ 1.5 γs. The dependence of the "height" of |Bv(f,f)| on the current through the diode is qualitatively similar to this one for the spectrum. The power law describes these dependences, however the exponents are essentially different.
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Arkady V. Yakimov, Arkady V. Yakimov, Alexander V. Belyakov, Alexander V. Belyakov, Mikhail Yu. Perov, Mikhail Yu. Perov, Lode J. K. Vandamme, Lode J. K. Vandamme, } "Bispectrum of the 1/f noise in diodes on quantum dots and wells", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.499828; https://doi.org/10.1117/12.499828
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