8 May 2003 Current 1/f fluctuations in equilibrium semiconductor
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.490202
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The current internal fluctuations appearing in the homogeneous, unlimited and non-degenerate semiconductors having parabolic band structure are investigated. At the considered case the external electric field is absent and the semiconductor is in thermal equilibrium state. For the definiteness only the behavior of the conduction electron system is considered. It is shown that equilibrium fluctuations of the electron current, conditioned by the fluctuations of the electron quasi-momentum, are describing by fluctuations of the asymmetric component of the electron distribution function. The following mechanism of these fluctuations is suggested. During the random phonon-phonon scattering the fluctuations of the quasi-momentum of acoustic phonons are coming into existence, which are transmitting to the electron system via electron-phonon interactions. On the base of this mechanism, the spectral density of the electron current equilibrium fluctuations SI(ω) is calculated. It is shown that SIconst in the frequency range ω < ω0. In the frequency range ω>0 < ω < ω1, frequency dependence of spectrum SI(ω) described by 1/ω law, and in the range ω > ω1 it is described by 1/ω2 law. The characteristic frequencies ω1 and ω0 are determined by parameters of semiconductors being under investigation as well as by processes of scattering and diffusion of electrons and phonons in quasi-momentum space.
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Slavik V. Melkonyan, Slavik V. Melkonyan, } "Current 1/f fluctuations in equilibrium semiconductor", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.490202; https://doi.org/10.1117/12.490202
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