8 May 2003 Current carrier mobility fluctuations in homogeneous semiconductors
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.490196
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The two main causes of origin of the mobility fluctuation of the electrons in homogeneous, unlimited, and non-degenerated semiconductors are discussed. It is shown that the mobility fluctuation is conditioned by the symmetric component of the fluctuation of the distribution function, i.e. by the fluctuations of the conduction electrons energy. On the base of the developed quasi-classical model the spectrum of electrons lattice mobility fluctuations is calculated. In the frequency wide variation range it has 1/f form.
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Slavik V. Melkonyan, Ferdinand V. Gasparyan, Vladimir M. Aroutiounian, Can E. Korman, "Current carrier mobility fluctuations in homogeneous semiconductors", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.490196; https://doi.org/10.1117/12.490196
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