8 May 2003 Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003); doi: 10.1117/12.496961
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
We review recent experimental and theoretical work towards the realization of a fast and ultrasensitive, nanomechanical displacement detector based on the radio frequency single electron transistor (rf-SET).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miles P. Blencowe, "Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.496961; https://doi.org/10.1117/12.496961
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KEYWORDS
Resonators

Capacitance

Sensors

Oscillators

Capacitors

Resistance

Transistors

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