8 May 2003 Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.496961
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
We review recent experimental and theoretical work towards the realization of a fast and ultrasensitive, nanomechanical displacement detector based on the radio frequency single electron transistor (rf-SET).
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Miles P. Blencowe, Miles P. Blencowe, } "Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.496961; https://doi.org/10.1117/12.496961
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