8 May 2003 Low-frequency noise in AlGaAs/InGaAs/GaAs Hall micromagnetometers
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.497001
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
We report on studies aimed at understanding and improving the intrinsic noise of high-performance sensors using a 2D electron gas channel confined by a quantum well in the pseudomorphic AlGaAs/InGaAs/GaAs heterostructure. MIS gated and ungated Hall sensors shaped as a Greek cross with dimensions ranging from 100 μm down to submicrometer range have been investigated. At room temperature the predominant low frequency Hall voltage noise originates from the ensemble of trapping/detrapping events occurring within the continuum of GaAs surface states. Its power spectral density can be deduced from independent measurements of the interface trap density-of-states by applying Shockley-Read-Hall dynamics and the Fluctuation-Dissipation Theorem. In fact, theoretical spectra calculated without any adjustable fitting parameter coincide closely with the experimentally measured ones. At cryogenic temperature this interface traps noise freezes out, thus revealing a much weaker intrinsic background noise with 1/f spectrum. For small sensors the intrinsic 1/f noise converts into one or a few lorentzians due to the action of individual random telegraph signals (RTS). For Hall crosses with an intersection of 4x4μm2, we find statistically less than 1 fluctuator per each decade of time constant at 77 K. Due to the random distribution of the elementary fluctuators, some of these small Hall crosses may show less low-frequency noise than much larger 60x60μm2 sensors.
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Vincent Mosser, Vincent Mosser, Grzegorz Jung, Grzegorz Jung, Jacek Przybytek, Jacek Przybytek, Miguel Ocio, Miguel Ocio, Youcef Haddab, Youcef Haddab, } "Low-frequency noise in AlGaAs/InGaAs/GaAs Hall micromagnetometers", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.497001; https://doi.org/10.1117/12.497001

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