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8 May 2003 Mesoscopic noise in VLSI devices
Giuseppe Iannaccone
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Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.496998
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The rich variety of noise properties that make the field of mesoscopic transport so fascinating is going to be shared with "common" VLSI devices. Typical MOSFETs used of present-day VLSI circuits and systems already have feature sizes smaller than what we usually consider mesoscopic devices. In this talk, we focus on shot noise of the drain and gate currents in nanoscale MOSFETs. The subject is of interest from the point of view of applications, since adequate models of noise in such MOSFETs are required, especially for high-frequency analog and mixed-signal applications, and from the point of view of the understanding of the underlying physics, since effects typical of mesoscopic devices can now be observed at room temperature and in silicon.
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Giuseppe Iannaccone "Mesoscopic noise in VLSI devices", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); https://doi.org/10.1117/12.496998
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KEYWORDS
Oxides
Field effect transistors
Electrodes
Very large scale integration
Silicon
Capacitance
Molybdenum
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