24 April 2003 Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices
Author Affiliations +
Abstract
This study investigates magnetic layer structures suitable for devices measuring mechanical responses such as stress, strain and pressure. The sensors are based either on giant magnetoresistiance (GMR) structures or on magnetic tunneling junctions (MTJ's) both intentionally prepared with highly magnetostrictive free layer materials. Results for magnetostrictive Fe50Co50 materials or amorphous Co- or Fe-based alloys serving as sensing (or “free”) layers are discussed in view of possible applications. In general, gauge factors in the range of 300-600 have been obtained for strain sensors based on MTJ's, whereas gauge factors of 2-4 are typical for metal based thin film, and 40-180 for piezoresistive strain gauges.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus Loehndorf, Markus Loehndorf, Stefani Dokupil, Stefani Dokupil, Manfred Ruehrig, Manfred Ruehrig, Joachim Wecker, Joachim Wecker, Eckhard Quandt, Eckhard Quandt, } "Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.500012; https://doi.org/10.1117/12.500012
PROCEEDINGS
9 PAGES


SHARE
Back to Top