24 April 2003 Fabrication of nitride thin films from laser plasma
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Abstract
In this paper we report about investigation of laser and laser-magnetron fabrication of nitride thin films (AlN, AlN:Mn, GaN, GaN:Zn, GaN:Cr) in quasi-closed chemically active ambience. On the base of conducted investigations it was found that the mode of deposition from both excited atoms and ions and chemically-active gas (nitrogen) can be realized depending on laser pulse energy, nitrogen pressure in the chamber and target-substrate distance what results in films formation with minimal deviation from stoichiometrical composition. Films crystallinity level and structure perfection depend on their growth rate on substrate surface. The complex of experimental and theoretical works on study of mechanical pressure in system AlN-Al2O3, is carried out by the analysis of elastic deformations. Is established, that the condensed layers as by laser and laser-magnetron methods were in is intense the deformed condition of compression. Basic regularities of pulse laser crystallization and cathodoluminescent brightness alteration dependencies on energy density of laser annealing were studied.
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Bohdan K. Kotlyarchuk, Dmytro I. Popovych, Andrew Serednytski, "Fabrication of nitride thin films from laser plasma", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.499185; https://doi.org/10.1117/12.499185
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