21 April 2003 Optimal design of leak-proof SRAM cell using MCDM method
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Abstract
As deep-submicron CMOS technology advances, on-chip cache has become a bottleneck on microprocessor's performance. Meanwhile, it also occupies a big percentage of processor area and consumes large power. Speed, power and area of SRAM are mutually contradicting, and not easy to be met simultaneously. Many existent leakage suppression techniques have been proposed, but they limit the circuit's performance. We apply a Multi-Criteria Decision Making strategy to perform a minimum delay-power-area optimization on SRAM circuit under some certain constraints. Based on an integrated device and circuit-level approach, we search for a process that yields a targeted composite performance. In consideration of the huge amount of simulation workload involved in the optimal design-seeking process, most of this process is automated to facilitate our goal-pursuant. With varying emphasis put on delay, power or area, different optimal SRAM designs are derived and a gate-oxide thickness scaling limit is projected. The result seems to indicate that a better composite performance could be achieved under a thinner oxide thickness. Under the derived optimal oxide thickness, the static leakage power consumption contributes less than 1% in the total power dissipation.
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Qi Wang, Sung-Mo Kang, "Optimal design of leak-proof SRAM cell using MCDM method", Proc. SPIE 5117, VLSI Circuits and Systems, (21 April 2003); doi: 10.1117/12.499068; https://doi.org/10.1117/12.499068
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