29 April 2003 Nanostructured holographic recording utilizing InOx photorefractive thin films
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Abstract
Photorefractive materials consistute a fast growing branch of nonlinear optics. The materials most commonly designated as photorefractive involve a charge-transport-induced non-linearity. Recent work on simple oxides such as InOx, prepared by dc sputtering, has demonstrated changes in their conductivity of more than six orders of magnitude after low power UV illumination and subsequent oxidation in and Ozon atmosphere. The structural changes on these films induced by growth parameters were studied by x-ray diffraction and Atomic Force Microscopy (AFM). Between Room Temperature (BRT) and 300°C it was found that there is a preferred growth along the (222) axis while AFM revealed a roughness increase as a function of film thickness and a tendency for nanoscale grains to be overgrown by larger neighbors. Based on these light induced charge-transport changes of InOx, ambient holographic recording process characteristics were obtained using a UV laser radiation at 325nm. It was realized that there exists a direct correlation of the recording efficiency with conductivity changes under ambient conditions. Evidence is provided for the presence of two coexisting processes in the recording regime.
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George Kiriakidis, "Nanostructured holographic recording utilizing InOx photorefractive thin films", Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.500032; https://doi.org/10.1117/12.500032
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