29 April 2003 New challenges in Rutherford backscattering spectrometric (RBS) analysis of nanostructured thin films
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Abstract
When determining exact quantitative elemental composition of thin films, the ultimate solution is often an application of ion beam analytical techniques, mostly Rutherford Backscattering Spectrometry (RBS). This technique is usually treated to be insensitive for the density of the layers, however, in some cases it became obvious that surface roughness, voids and precipitates may affect the shape of the spectral signature of a particular chemical element. In order to use RBS efficiently for nanostructured thin films, it is essential to know how the given surface topography (or above parameters) influences the relevance of the measurements. In this paper we present our contributions to the topic: the outline of a new simulation of RBS spectra of rough and nanostructured thin layers; and a brief discussion how the character and parameters of the geometrical structure (shapes, filling factors, etc.) can affect the interpretation of the measured data.
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Aliz Simon, Aliz Simon, Zoltan Kantor, Zoltan Kantor, } "New challenges in Rutherford backscattering spectrometric (RBS) analysis of nanostructured thin films", Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.499233; https://doi.org/10.1117/12.499233
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