8 August 2003 Annealing of radiation defects in x-irradiated LiBaF3
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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515699
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the recombination of radiation defects above RT.
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Peteris Kulis, Peteris Kulis, Uldis Rogulis, Uldis Rogulis, Maris Springis, Maris Springis, Ivars Tale, Ivars Tale, Aris Veispals, Aris Veispals, Valters Ziraps, Valters Ziraps, } "Annealing of radiation defects in x-irradiated LiBaF3", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515699; https://doi.org/10.1117/12.515699

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