8 August 2003 Hot-carrier transport governed optical nonlinearities in dc-biased GaAs crystals
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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515804
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Hot carrier dynamics and related optical nonlinearities, which arise in dc-biased GaAs under spatially varying optical illumination, have been investigated using light diffraction on transient grating technique. Under dc-bias, time resolved four-wave mixing measurements had evidenced an oscillatory behavior and increased efficiency of light diffraction. The effect was found the largest at illumination intensity corresponding to the electron density between 1015 cm-3 and 1016 cm-3. Numerical modeling of nonlinear transport at various applied dc-voltages and photoexcitation levels revealed conditions for an efficient and fast refractive index modulation by a transient high-field domain grating. Experimental obervations have been explained in terms of nonuniform carrier heating and formation of transient Gunn-domain grating in the region of negative differential resistance. Our results open the possibility of measuring hot-carrier picosecond dynamics and predict a novel way of fast refractive index modulation in dc-biased compound semiconductors.
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Irmantas Kasalynas, Irmantas Kasalynas, Liudvikas Subacius, Liudvikas Subacius, Ramunas Aleksiejunas, Ramunas Aleksiejunas, Kestutis Jarasiunas, Kestutis Jarasiunas, "Hot-carrier transport governed optical nonlinearities in dc-biased GaAs crystals", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515804; https://doi.org/10.1117/12.515804

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