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8 August 2003 Irradiation effects in lead zirconate thin films
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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003)
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Lead zirconate PbZrO3 (PZ) and PbZr0.53Ti0.47O3 (PZT) sol-gel films with a thickness of up to 1.5 μm were deposited on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating technique and heterostructures of the same composition as well as on Pb0.92La0.08 (Zr0.65Ti0.35)O3 (PLZT-8) (with a thickness of 0.4 μm) were pulse laser deposited (PLD) on Pt/Ti/SiO2/Si. Observation of a typical antiferroelectric (AFE) double hysteresis loop in obtained PZ heterostructures at room temperature was attributed to the superior dielectric strength in case of thin film materials. The thermal behavior of dielectric permittivity ε of PZ film reveals a maximum near 225°C on heating and 219°C on cooling. The higher resistance of antiferroelectric PZ thin films as compared to ferroelectric (e.g., PZT, PLZT-8) heterostructures to neutron irradiation (up to fluence 2x1022m-2)* is recognized and discussed.
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Andris R. Sternberg, A. Krumins, K. Kundzins, V. Zauls, I. Aulika, L. Cakare, R. Bittner, H. Weber, K. Humer, D. Lesnyh, D. Kulikov, and Y. Trushin "Irradiation effects in lead zirconate thin films", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003);

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