Luminescence of intrinsic defects in LiBaF3

A. Pujats; A. Veispals

doi:10.1117/12.515696

8 August 2003 Luminescence of intrinsic defects in LiBaF₃

A. Pujats, A. Veispals

Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515696
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

A wide emission band in the region of 425 nm is observed in all the examined crystals at photo and ionising irradiation. Maximum of the complex luminescence band is observed at 410 nm at 350 K and at 450 nm at 85 K. The shift of the peak of the band envelope towards shorter wavelengths as the temperature increases is related to thermal dependence of the intensity of elementary components of the luminescence band. The authors suggest that the complex luminescence band arises from electronic excitations at "antisite" defects, i.e., defects caused by stoichiometric deviations, when a portion of Li⁺ cations (cations of one type of the LiBaF₃ crystal lattice) occupy sites of Ba²⁺ cations (cations of another type) and vice versa.

Citation Download Citation

A. Pujats and A. Veispals "Luminescence of intrinsic defects in LiBaF₃", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515696

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