8 August 2003 Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures
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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515801
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Earlier we reported the investigation of the electrical properties of selectively doped and degenerate CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy. The maximum Hall mobilities in these heterostructures were nevertheless still inferior to 400 cm2/Vs. The purpose of the present work was to optimize these quantum structures in order to increase the carrier mobility and to analyze in detail the scattering mechanisms. We demonstrate that the Hall mobility in the CdS quantum well (QW) can reach 2800 cm2/Vs for slightly doped structures at low temperatures and that it is mostly limited by interface alloying scattering.
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M. Dremel, M. Dremel, H. Priller, H. Priller, M. Gruen, M. Gruen, C. Klingshirn, C. Klingshirn, Vaidotas Kazukauskas, Vaidotas Kazukauskas, } "Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515801; https://doi.org/10.1117/12.515801
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