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8 August 2003 Spectroscopic ellipsometry of TiO2/Si
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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515700
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
In order to characterize TiO2 films in terms of the overall optical response, spectroscopic ellipsometry studies of the system TiO2/Si were carried out. The films were grown by the atomic-layer chemical vapor deposition on Si(111) substrates. Optical measurements were performed by means of a photometric ellipsometer with rotating analyzer. Experimental results have been analyzed using multilayer and pseudodielectric function approximations.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gintautas J. Babonas, Ahti Niilisk, Alfonsas Reza, Algirdas Matulis, and Arnold Rosental "Spectroscopic ellipsometry of TiO2/Si", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515700
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