Paper
8 August 2003 Low-frequency noise and quality prediction of MQW buried-heterostructure DFB lasers
Sandra Pralgauskaite, J. Matukas, V. Palenskis, G. Letal, R. Mallard, S. Smetona
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Abstract
A detailed study of both the optical and electrical low-frequency noise and correlation factor between optical and electrical fluctuation characteristics of single-mode multiple quantum wells (MQW) curied-heterostructure (BH) distributed feedback (DFB) laser diodes has been carried out under a wide current range. These techniques have been used to assess the structural differences between devices that exhibit superior and poor performance and reliability. It has been concluded that for the devices investigated here, the poor device performance characterstics (larger threshold current) and poor reliability are induced by the existence of defects in the interface between the active region and burying laser. These defects generate leakage currents that lead to teh larger threshold current. Defects migration during ageing forms clusters, and this leads to the poor reliability of the lasers. We demonstrate that the low-frequency noise investigations can detect the presence of defects that induce short device lifetime.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sandra Pralgauskaite, J. Matukas, V. Palenskis, G. Letal, R. Mallard, and S. Smetona "Low-frequency noise and quality prediction of MQW buried-heterostructure DFB lasers", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); https://doi.org/10.1117/12.517008
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Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Reliability

Interfaces

Quantum wells

Signal to noise ratio

Chlorine

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