Metallic and semiconducting nanowires: properties and architectures

Donats Erts; Hakan Olin; Justin D. Holmes

doi:10.1117/12.517030

8 August 2003 Metallic and semiconducting nanowires: properties and architectures

Donats Erts, Hakan Olin, Justin D. Holmes

Proceedings Volume 5123, Advanced Optical Devices, Technologies, and Medical Applications; (2003) https://doi.org/10.1117/12.517030
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Nanowires are expected to play an important role in future electronic, optical devices and nanoelectromechanical devices. Measuring the electrical and mechanical properties of nanowires is however a difficult task due to their small dimensions. Here we report the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of metallic and semiconductor nanowires. Additionally, in this paper we describe a novel approach for synthesizing mesoporous silicas with tunable pore diameters, wall thickness and pore spacings that can be used as tempates for the assembly of semiconductor nanowire arrays. Silicon and germanium nanowires, with size monodisperse diameters, can readily be formed within the mesoporous silica matrix using a supercritical fluid inclusion technique. These nano-composite materials display unique optical properties such as intense room temperature ultraviolet and visible photoluminense. The implication of these mesoporous nanowire materials for future electronic and opto-electronic devices is discussed.

Citation Download Citation

Donats Erts, Hakan Olin, and Justin D. Holmes "Metallic and semiconducting nanowires: properties and architectures", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); https://doi.org/10.1117/12.517030

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