8 August 2003 Progress in GaN-based materials and optical devices
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Abstract
Recent advances in the epitaxial growth of GaN and its alloys with Al and In have led to major improvements in the performance of short-wavelength visible and UV diode lasers and solar-blind detectors for UV wavelengths. A decrease in defect densities to less than 106 cm-2 by an epitaxial lateral overgrowth technique has enabled the fabrication of 405-nm InGaN lasers emitting 30 mW continuously with 15000-h lifetimes. Laser wavelength coverage has been extended to 366 nm in the UV. Initial results in the development of quantum dot lasers have been reported and active mode locking of 409-nm lasers has yielded 30-ps-long pulses, of interest for frequency upconversion. AlGaN photodiodes with a band-edge wavelength of 285 nm, appropriate for solar-blind detection, have been fabricated and low dark-current densites (10 nA/cm2 at -5-V bias) have ben reported. Gains of 10 when operated in the linear mode and gains of ~106 in Geiger-mode operation have been obtained in GaN avalanche photodiodes.
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Ivars Melngailis, Ivars Melngailis, } "Progress in GaN-based materials and optical devices", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); doi: 10.1117/12.517027; https://doi.org/10.1117/12.517027
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