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22 September 2003 Silicon thermal conductivity detector (TCD) with the Pt resistors
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Proceedings Volume 5124, Optoelectronic and Electronic Sensors V; (2003) https://doi.org/10.1117/12.517125
Event: Optoelectronic and Electronic Sensors V, 2002, Rzeszow, Poland
Abstract
Pt resistors formation technology for the thermal conductivity detector (TCD) is presented. Channels for the gas flow were milled in the glass plate and etched in the silicon chip with use of the TMAH+ water solution. Resistors made up of the thin Pt layer, were located across the channels on the silicon chips. They were connected through the contract windows in the Si3N4 and SiO2 layers, with the n+-type regions of the p-type, (100) silicon substrate substrate. BSC-type contacts to the bonding pads allowed electrical contact to the bonding pads located on the opposite side of the silicon substrate. Resistors were electrically tested as a detector heaters and thermoresistors.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan M. Lysko, Marianna Gorska, Hanna Wrzesinska, Krzysztof Hejduk, Bogdan Latecki, and Joanna Lozinko "Silicon thermal conductivity detector (TCD) with the Pt resistors", Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); https://doi.org/10.1117/12.517125
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