Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation

Oleg N. Ermakov

doi:10.1117/12.517184

30 September 2003 Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation

Oleg N. Ermakov

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517184
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

With account of previous analysis of optoelectronic technologies for on - board systems experimental investigation results are presented for a number of structures (monocrystalline silicon, silicon on sapphire (SOS) structures, CdSe/SiO₂/Si, GaN and InGaN on sapphire) illustrating the integrated optoelectronics possibilities for future very large-scale optoelectronic integrated circuirs realization. Data are presented for luminescence and photosensitivity characteristics of devices based on above-mentioned structures. Experimental results on electro - optic conversion characteristics in emitter - photodetector geometry are presented for silicon and sapphire substrate based devices. Different electroluminescence mechanisms in both forward and reverse biased mode with thermalized and hot carriers have been studied. It's shown that noticeable output signal can be obtained even using SOS - emitters. It's emphasized that the greatest potential for future integrated optoelectronics have sapphire substrate based devices. Physical and technological aspects of monolithic devices are considered including spectral characteristics, efficiency, resolution, cross stalk and pixel size limitations, low - current operation mode.

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Oleg N. Ermakov "Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517184

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KEYWORDS

Silicon

Sapphire

Electroluminescence

Luminescence

Patterned sapphire substrate

Indium gallium nitride

Light emitting diodes

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