30 September 2003 Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasma
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Abstract
Thin MnCdHgTe epitaxial layers (4-6 μm) have been obtained by RF sputtering with localization of the mercury glow discharge in quasi-closed volume. The peculiarities of their condensation of CdTe substrates have been studied. The influence of technological parameters on the structural and electrophysical properties of MnCdHgTe layers has been investigated. The MnCdHgTe layers were chemically homogeneous in the surface of 2.5×2.5 cm2 size. On the basis of the Hall measurements carried out in the magnetic field 0.1 T it has been shown that epitaxial MnCdHgTe layers obtained at the substrate temperatures in the region from 220 up to 250°C had p-type conductivity with the carrier concentration of about 1016-1017 cm-3 the anomalously high values of the hole mobility (up to 1500 cm/Vs) at 77 K.
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Volodymyr Kavych, Volodymyr Kavych, Maria Lozynska, Maria Lozynska, Leonid Mansurov, Leonid Mansurov, "Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasma", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517394; https://doi.org/10.1117/12.517394
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