30 September 2003 Features of growth and photoconductivity of epitaxial films of the Pb1-xMnxTe(Ga) solid solutions
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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003); doi: 10.1117/12.517369
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
In the present work the features of growth and photoconductivity of epitaxial films of (formula available in paper) grown on substrates BaF2 (111, 100) by method of molecular beam condensation are investigated. Is established, that of film with perfect crystal structure (W1/2=80÷100), thickness 0,5 divided by 1 μm, obtained at speeds of condensation υK=5 divided by 10 Angstrom /s and TS = 400°C. Were have obtained high - resistance films n, p - types of conductivity and is shown, that they are photosensitive. At that the maximum in spectra of photoconductivity is displaced to shorter waves with growth of the contents of manganese in samples (x = 0,01 divided by 0,04), that is explained by increase of width of the forbidden band zone.
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I. R. Nuriev, S. S. Farzaliyev, Kh. D. Djalilova, R. M. Sadigov, "Features of growth and photoconductivity of epitaxial films of the Pb1-xMnxTe(Ga) solid solutions", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517369; https://doi.org/10.1117/12.517369
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Lead

Solids

Gallium

Manganese

Crystals

Magnetism

Molecular beams

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