30 September 2003 Femto-attosecond photoelectronic imaging (the present state of the art and new trends)
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Abstract
Basic advantages and limitations of ultrafast photoelectronic imagine are overviewed. Presented are recent experimental results on recording of Ti:sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of ultrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100kV/mm) electrical field strength nearby the photocathode surfaces, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.
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Mikhail Ya. Schelev, Mikhail Ya. Schelev, } "Femto-attosecond photoelectronic imaging (the present state of the art and new trends)", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517182; https://doi.org/10.1117/12.517182
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