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30 September 2003 Functionalities of Cd1-xZnxSe films deposited from a water solution in IR region of a spectrum
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Abstract
In the present work the features of an impurity and induced impurity photoconductivities in IR region, and also anomalous photoconduction and photochemical reaction in Cd1-xZnxSe films are considered depending on film deposition and heat treatment (HT) modes. The formation of Cdi-Cdi, Zni-Zni, Vse-Zni etc. associations in Cd1-xZnxSe films, providing occurrence of optical active electronic states, carried in an interval of energy 0.3÷0.6 eV, allows to use of these films for creation non-cooled photodetectors of IR-range. At illumination of films by λ=0.95 μm light, the anomalous photoconductivity and photomemory phenomenon were observed, connected with defects of metastable states, which concentration can be controlled by film structure, deposition and HT modes, and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. The photochemical reaction with activation energy of 0.17÷0.21 eV, was observed at illumination (by λ=1.25 μm light) of Cd0.8Zn0.2Se films heart treated on air during 10÷15 minutes. It represents a disintegration process of donor-acceptor pairs, consisting r-centres and Cdi, Zni donors, and caused by precipitation conditions and HT.
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A. Sh. Abdinov, M. A. Jafarov, E. F. Nasirov, and H. M. Mamedov "Functionalities of Cd1-xZnxSe films deposited from a water solution in IR region of a spectrum", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517398
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