Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics

Oleg N. Ermakov; Valery N. Martynov; Galina A. Alexandrova; Sergey A. Stacharny; Alexander A. Voytiuk

doi:10.1117/12.517331

30 September 2003 Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics

Oleg N. Ermakov, Valery N. Martynov, Galina A. Alexandrova, Sergey A. Stacharny, Alexander A. Voytiuk

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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517331
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

With account of the integrated optoelectronics global trends including intensive search of new monocrystalline, polycrystalline amorphous and polymer media review is presented for the present state and development trends of light emitters (light emitting diodes (LED’s), laser diodes (LD’s)) and photodetectors based on heterostructures in In - Ga - N alloy system. It’s shown that in accordance with theoretical calculation MOCVD-grown heterostructures based on In - Ga - N alloy system can be used for the photodetectors fabrication with photocurrent gain up to 10⁶ as well as for high-efficiency LED’s (with luminous intensity more than 1 cd and short wavelength LD’s fabrication needed for optical storage system. Advantages and drawbacks of these devices are analyzed. Experimental data are presented on the electroluminescent and photoelectric characteristics of devices based on In-Ga-Al-N system. It’s supposed that statistical disorder in allay system leads to general broadening of luminescence and photosensitive spectra as well as to the smearing of optical nonlinearities that should be observed in quantum-confined system. In it’s turn it’s shown that statistical disorder manifestation can be related to peculiarities of MOCVD synthesis due to lattice mismatched growth and sharp nonlinear composition dependence on gaseous medium composition.

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Oleg N. Ermakov, Valery N. Martynov, Galina A. Alexandrova, Sergey A. Stacharny, and Alexander A. Voytiuk "Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517331

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KEYWORDS

Light emitting diodes

Indium gallium nitride

Gallium nitride

Sapphire

Gallium

Heterojunctions

Aluminum

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